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Manufacturer Part Number: | DF11MR12W1M1B11BOMA1 |
Manufacturer: | Rochester Electronics |
Part of Description: | IGBT MODULE |
Datasheets: | DF11MR12W1M1B11BOMA1 Datasheets |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | * |
Package | Bulk |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 50A |
Rds On (Max) @ Id, Vgs | 23mOhm @ 50A, 15V |
Vgs(th) (Max) @ Id | 5.5V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs | 125nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 800V |
Power - Max | 20mW |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Stock Status: 83
Minimum: 1
Quantity | Unit Price | Ext. Price |
---|---|---|
![]() Price is not available, please RFQ |
US $40 by FedEx.
Arrive in 3-5 days
Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 150$,Overweight will be charged separately