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Toshiba Electronic Devices and Storage Corporation / TPN4R712MD,L1Q
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TPN4R712MD,L1Q
| Manufacturer Part Number: | TPN4R712MD,L1Q |
| Manufacturer: | Toshiba Electronic Devices and Storage Corporation |
| Part of Description: | MOSFET P-CH 20V 36A 8TSON |
| Datasheets: | TPN4R712MD,L1Q Datasheets |
| Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
| Stock Condition: | In Stock |
| Ship From: | Hong Kong |
| Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
- REMARK
- Toshiba Electronic Devices and Storage Corporation TPN4R712MD,L1Q is available at chipnets.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.
Specification
| Type | Description |
|---|---|
| Series | U-MOSVI |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 18A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Package / Case | 8-PowerVDFN |
BUYING OPTIONS
Stock Status: 6602
Minimum: 1
| Quantity | Unit Price | Ext. Price |
|---|---|---|
Price is not available, please RFQ |
||
Freight calculation
US $40 by FedEx.
Arrive in 3-5 days
Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 150$,Overweight will be charged separately
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