Image is for reference, please contact us to get the real picture
Manufacturer Part Number: | IPP65R190E6XKSA1 |
Manufacturer: | IR (Infineon Technologies) |
Part of Description: | MOSFET N-CH 650V 20.2A TO220-3 |
Datasheets: | IPP65R190E6XKSA1 Datasheets |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | CoolMOS™ |
Package | Tube |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 730µA |
Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 151W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3 |
Package / Case | TO-220-3 |
Stock Status: 116
Minimum: 1
Quantity | Unit Price | Ext. Price |
---|---|---|
Price is not available, please RFQ |
US $40 by FedEx.
Arrive in 3-5 days
Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 150$,Overweight will be charged separately